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APTM120A65FT1G Phase leg MOSFET Power Module 5 Q1 7 8 Q2 9 10 1 2 12 3 4 NTC 6 11 VDSS = 1200V RDSon = 650m typ @ Tj = 25C ID = 16A @ Tc = 25C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features * Power MOS 8TM Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration * * * Benefits * * * * * * Pins 1/2 ; 3/4 ; 5/6 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1200 16 12 105 30 780 390 14 Unit V A V m W A December, 2007 1-5 APTM120A65FT1G - Rev 0 Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM120A65FT1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 1200V VGS = 0V Tj = 125C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 780 5 100 Unit A m V nA 3 650 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 14A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 14A RG = 2.2 Min Typ 7736 715 92 300 50 140 50 31 170 48 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 14A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ Max 16 12 1.1 25 335 640 Unit A V V/ns ns C IS = - 14A VR = 100V diS/dt = 100A/s 1.72 4.67 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 14A di/dt 1000A/s VDD 800V Tj 125C www.microsemi.com 2-5 APTM120A65FT1G - Rev 0 December, 2007 APTM120A65FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.32 150 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTM120A65FT1G - Rev 0 December, 2007 APTM120A65FT1G Typical Performance Curve Low Voltage Output Characteristics 40 VGS=10V Low Voltage Output Characteristics 25 TJ=125C ID, Drain Current (A) ID, Drain Current (A) 20 VGS=6, 7, 8 &9V 30 TJ=25C 15 5V 20 TJ=125C 10 5 0 4.5V 10 0 0 5 10 15 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature 3 ID, Drain Current (A) 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 VGS=10V ID=14A 20 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) Transfert Characteristics 20 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C RDSon, Drain to Source ON resistance 15 10 TJ=25C 5 0 0 1 2 3 4 5 6 TJ, Junction Temperature (C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 VDS=240V VDS=600V Ciss 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VDS=960V ID=14A TJ=25C C, Capacitance (pF) 1000 Coss 100 Crss 10 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4-5 APTM120A65FT1G - Rev 0 December, 2007 1 APTM120A65FT1G Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 60 50 40 TJ=125C 30 20 10 TJ=25C 0 0 0.2 0.4 0.6 0.8 1 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.9 0.7 0.5 0.3 0.1 0.05 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTM120A65FT1G - Rev 0 December, 2007 |
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